321-Layer 3D NAND

SK Hynix showcased its 321-layer TLC NAND memory at the Flash Memory Summit 2023. The South Korean company is the first NAND maker to publicly demonstrate 3D NAND with over 300 layers. Although such memory is expected in mass production in 2025, the demonstration is meant to showcase SK Hynix's preparedness for the next wave of non-volatile memory technology. This showcased 321-layer 3D NAND memory device boasts a 1 Tb (128 GB) capacity with TLC architecture, but SK Hynix refrained from revealing other details about it, such as interface speed. Meanwhile, the company mentioned that the chip features a 59% improvement in productivity compared to a 512 Gb 238-layer 3D TLC device, highlighting a significant improvement in per-wafer storage density. Whether or not the new...

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